SiC Wafer
Silicon Carbide wafer is a wide bandgap semiconductor material suited for devices requiring higher performance in harsher environment. Some of the ideal applications include next generation ecofriendly vehicles, and generation to distribution of renewable energy.
![SiC-Wafer](https://www.gncmat.com/wp-content/uploads/2021/11/SiC-Wafer.jpg)
Applications by Prime Grade
Portfolio | Features & Benefits | Typical Applications |
---|---|---|
Prime Standard | Guaranteed MPD tolerances. Balances performance and cost for electronic components with low to medium current ratings. | Schottky and junction barrier Schottky diodes |
Prime Select | More stringent tolerances for MPD current ratings and TSD. Allows for manufacturing with mid-range current ratings. |
Pin diodes and switches |
Prime Ultra | Extremely low MPD, TSD and BPD tolerances and tightened wafer resistivity. Ensures product quality and improves cost efficiency in manufacturing high current devices. | High current and voltage MOSFETs, JFETs, IGBTs, BJTs and pin diodes with large die ares |
Material Properties
Refer to product data sheet for complete property summary
Product metric | Standard | Select | Ultra |
---|---|---|---|
Diameter, mm | 14938 – 150.2 | ||
Thickness, ㎛ | 325 – 375 | ||
Primary flat length, mm | 45 – 50 | ||
Bow, ㎛ | ± 30 | ||
Warp, ㎛ | ≤ 50 | ||
TTV, ㎛ | ≤ 10 | ||
SBIR, ㎛ | ≤ 5 | ||
Foreign polytypes, % | 0 | ||
Visible scratches, mm | ≤ 40 | ||
Resistivity, ohm-cm | 0.014 – 0.024 | 0.014 – 0.023 | 0.014 – 0.022 |
Total usable area, % | ≥ 90 | ≥ 95 | ≥ 97 |
Dislocation density, cm-2 | |||
EPD (mean) | ≤ 15,000 | ≤ 12,000 | ≤ 9,000 |
TED (mean) | ≤ 10,000 | ≤ 9,000 | ≤ 8,000 |
TSD (mean) | ≤ 3,000 | ≤ 500 | ≤ 400 |
BPD (mean) | ≤ 5,000 | ≤ 4,000 | ≤ 3,000 |
MPD, cm-2 | ≤ 1 | ≤ 0.5 | ≤ 0.3 |