SOI Wafer
Silicon On Insulator Wafer (SOI wafer) has highly improved crystal characteristics and properties of pure silicon layer as they have an insulating layer in-between the wafer surface and substrate to completely remove the hindrance from the substrate.
With a flawless thin Si layer on top of the insulating layer (thermal oxide film), SOI Wafer can avoid insulating walls or well processes. Although SOI Wafer is more expensive than the regular Si Wafers, it allows the semiconductor manufacturers to reduce the time and cost of product manufacture and development due to its traits.
Diameter: 150~200mm
Specification | TM-SOI | TM+EPI SOI | Bonded SOI | |
---|---|---|---|---|
Device Layer | Diameter (mm) | 200 | 200 | 150, 200 |
Thickness (um) | 0.1 ~ 0.5 | 1.5 ~ 10 | 2 ~ 100 | |
Uniformity | ±10nm | ±0.1μm | ±0.5μm | |
Dopant | P-type / N-type | |||
Resistivity | Customer’s spec | |||
Buried Oxide | Thickness | 0.01 – 3μm | ||
Uniformity | 〈±3% | |||
Handle Layer | Dopant | P-type / N-type | ||
Resistivity | Customer’s spec |