GaAs Wafer

Gallium Arsenide (GaAs) Wafer is a compound semiconductor material consisted of Gallium (Ga) and Arsenic (As).
It has high temperature stability, high frequency capability, and generates low noise.
It is used as a key material in many promising areas such as LED(VCSEL), laser, wireless communication, and solar panels.

Diameter: 100~150mm

Specification 100 mm 150 mm 200 mm
Growth Method VGF / LEC
Conduction Type Semi-insulating / Semi-conducting
Dopant Si
EPD (cm-2) 100 ~ 5,000
Thickness (μm) 525±25 625±25 725±25
Warp (μm) Max 10
TTV (μm) Max 5
Front Side Polished, Epi-ready
Back Side Polished