LN/LT Wafer

니오비움산 리튬 및 탄탈산 염 리튬 웨이퍼는 광학 장치 및 통신 장비, 특히 표면 탄성파 필터링(SAW 필터)에 주로 사용됩니다.
소재의 탁월한 화학적, 기계적 결합과 차세대 통신 방법의 확장으로 인해 지속적으로 수요가 증가하고 있습니다.

Diameter: 75~150mm

Specification LN(LiNbO3) Wafer LT(LiTaO3) Wafer
Material SAW Grade LiNbO3 Crystal SAW Grade LiTaO3 Crystal
Curie Temp 1142±2.0℃ 603±2℃
Cutting Angle X/Y/Z/Y36/Y41/Y64/Y128 etc X/X112Y/Y36/Y42/Y48 etc
Diameter 75 mm 100 mm 150 mm
Tol(±) 〈 0.20 mm
Thickness 0.18 ~ 0.5mm or more
Primary Flat 22 mm 32 mm 42.5 mm
LTV (5mmx5mm) 〈 1µm
TTV 〈 3µm
Bow -30 〈 bow 〈 30
Warp 〈 40µm
PLTV(〈 0.5um) ≥ 95%(5mm*5mm)
Orientation Flat All available
Surface Type Single Side Polished /Double Sides Polished

LN Wafer

LT Wafer

4-6 inch, 5-50 um

LT Thin Film

Silicon Substrate

POI (LNOI/LTOI) Wafer

저희는 LN, LT 웨이퍼와 더불어, LNOI 와 LTOI 같은 POI 웨이퍼 또한 공급하고 있습니다.

LN / LT Thin Films (Standard & Customized)
Top Layer
/ Details		 Substrate Details Top Layer Thin Films Details
Multi-Layer
Structure		 Patterned
Electrode
& Waveguide		 Different Material
(SiO2/Si, Sapphire Quartz, SiC etc)		 PPLN Special Size Electrode
(Au, Pt, Cr, Al etc)		 Orientation
(Same as Bulk Wafers)		 Doped
(MgO, Fe, Er, Tm etc)
300-900 nm LiNbO3 ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
300-900 nm LiTaO3 ✓ ✓ ✓ ✓ ✓ ✓ ✓
5-50 μm LiNbO3 ✓ ✓ ✓ ✓
5-50 μm LiTiO3 ✓ ✓ ✓ ✓
300~900 nm Lithium Niobate Thin Films (LNOI)
Top Functional Layer
Thickness 300~900 nm Orientation X, Z
Material LiNbO3 Diameter 3, 4, 6 inch
Isolation Layer
Thickness 1000-4000 nm Material SiO2
Substrate
Material Si, Quartz, Sapphire etc. Thickness 230-1000 μm

3-6 inch, 300-900 nm

LN Thin Film

SIO2

Silicon Substrate

300~900 nm Lithium Tantalate Thin Films (LTOI)
Top Functional Layer
Thickness 300~900 nm Orientation Y-42 etc.
Material LiNbO3 Diameter 3, 4, 6 inch
Isolation Layer
Thickness 300-4000 nm Material SiO2
Substrate
Material Si, Quartz, Sapphire etc. Thickness 230-1000 μm

3-6 inch, 300-900 nm

LT Thin Film

SIO2

Silicon Substrate